Processing system and method for chemically treating a tera layer

ABSTRACT

A processing system and method for chemically treating a TERA layer on a substrate. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. In one embodiment, the system for processing a TERA layer includes a plasma-enhanced chemical vapor deposition (PECVD) system for depositing the TERA layer on the substrate, an etching system for creating features in the TERA layer, and a processing subsystem for reducing the size of the features in the TERA layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to co-pending U.S. Pat. application Ser. No.10/705,201, entitled “Processing System and Method for Treating aSubstrate”, filed on Nov. 12, 2003; co-pending U.S. Pat. applicationSer. No. 10/704,969, entitled “Processing System and Method forThermally Treating a Substrate”, filed Nov. 12, 2003; co-pending U.S.Pat. application Ser. No. 10/705,397, entitled “Method and Apparatus forThermally Insulating Adjacent Temperature Controlled Chambers”, filed onNov. 12, 2003; and co-pending U.S. Pat. application Ser. No. 10/644,958,entitled “Method and Apparatus For Depositing Materials With TunableOptical Properties And Etching Characteristics”, filed on Aug. 21, 2003.The contents of each of those applications are herein incorporated byreference in their entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a system and method for treating aTunable Etch Rate ARC (TERA) layer, and more particularly to a systemand method for chemical treatment of a TERA layer.

2. Description of the Related Art

During semiconductor processing, a (dry) plasma etch process can beutilized to remove or etch material along fine lines or within vias orcontacts patterned on a silicon substrate. The plasma etch processgenerally involves positioning a semiconductor substrate with anoverlying patterned, protective layer, for example a photoresist layer,in a processing chamber. Once the substrate is positioned within thechamber, an ionizable, dissociative gas mixture is introduced within thechamber at a pre-specified flow rate, while a vacuum pump is throttledto achieve an ambient process pressure. Thereafter, a plasma is formedwhen a fraction of the gas species present are ionized by electronsheated via the transfer of radio frequency (RF) power either inductivelyor capacitively, or microwave power using, for example, electroncyclotron resonance (ECR). Moreover, the heated electrons serve todissociate some species of the ambient gas species and create reactantspecie(s) suitable for the exposed surface etch chemistry. Once theplasma is formed, selected surfaces of the substrate are etched by theplasma. The process is adjusted to achieve appropriate conditions,including an appropriate concentration of desirable reactant and ionpopulations to etch various features (e.g., trenches, vias, contacts,gates, etc.) in the selected regions of the substrate. Such substratematerials where etching is required include silicon dioxide (SiO₂),low-k dielectric materials, poly-silicon, and silicon nitride. Duringmaterial processing, etching such features generally comprises thetransfer of a pattern formed within a mask layer to the underlying filmwithin which the respective features are formed. The mask can, forexample, comprise a light-sensitive material such as (negative orpositive) photo-resist, multiple layers including such layers asphoto-resist and an anti-reflective coating (ARC), or a hard mask formedfrom the transfer of a pattern in a first layer, such as photo-resist,to the underlying hard mask layer.

SUMMARY OF THE INVENTION

The principles of the present invention, as embodied and broadlydescribed herein, provide a method of processing a Tunable Etch Rate ARC(TERA) layer on a substrate. The TERA layer processing method includesdepositing the TERA layer on the substrate using a plasma enhancedchemical vapor deposition (PECVD) system, creating features in the TERAlayer using an etching system, and reducing the size of the features inthe TERA layer.

Additionally, a system for processing a TERA layer is presented. Thesystem includes a plasma enhanced chemical vapor deposition (PECVD)system for depositing the TERA layer on the substrate, an etching systemfor creating features in the TERA layer, and a processing subsystem forreducing the size of the features in the TERA layer.

Numerous other aspects of the invention will be made apparent from thedescription that follows and from the drawings appended hereto, as wouldbe appreciated by those skilled in the art.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the invention will now be described, by way of exampleonly, with reference to the accompanying schematic drawings, in whichcorresponding reference symbols indicate corresponding parts, and inwhich:

FIG. 1 illustrates a schematic representation of a processing systemaccording to an embodiment of the invention;

FIG. 2 illustrates a simplified flow diagram of a method for operating aprocessing system in accordance with an embodiment of the invention;

FIGS. 3A-3F illustrate simplified schematic views of a method forprocessing a substrate in accordance with an embodiment of theinvention;

FIGS. 4A-4G illustrate simplified schematic views of a method forprocessing a substrate in accordance with another embodiment of theinvention;

FIG. 5 illustrates a simplified block diagram of a PECVD system inaccordance with an embodiment of the invention;

FIG. 6 illustrates a simplified block diagram for a treatment system inaccordance with an embodiment of the invention; and

FIG. 7 illustrates a simplified block diagram of a processing subsystemin accordance with an embodiment of the invention.

DETAILED DESCRIPTION

In material processing methodologies, pattern etching comprises theapplication of a thin layer of light-sensitive material, such asphotoresist, to an upper surface of a substrate that is subsequentlypatterned in order to provide a mask for transferring this pattern tothe underlying thin film during etching. The patterning of thelight-sensitive material generally involves exposure by a radiationsource through a reticle (and associated optics) of the light-sensitivematerial using, for example, a micro-lithography system, followed by theremoval of the irradiated regions of the light-sensitive material (as inthe case of positive photoresist), or non-irradiated regions (as in thecase of negative resist) using a developing solvent.

Additionally, multi-layer and hard masks can be implemented for etchingfeatures in a thin film. For example, when etching features in a thinfilm using a hard mask, the mask pattern in the light-sensitive layer istransferred to the hard mask layer using a separate etch step precedingthe main etch step for the thin film. The hard mask can, for example,comprise a TERA layer that can be selected from several materials forsilicon processing including silicon dioxide (SiO₂), silicon nitride(Si₃N₄), and carbon, for example.

In order to reduce the feature size formed in the thin film, the hardmask can be trimmed laterally using, for example, a two-step processinvolving a chemical treatment of the exposed surfaces of the hard masklayer in order to alter the surface chemistry of the hard mask layer,and a post treatment of the exposed surfaces of the hard mask layer inorder to desorb the altered surface chemistry.

FIG. 1 illustrates a schematic representation of a processing systemaccording to an embodiment of the invention. In the illustratedembodiment, a processing system 1 for processing a substrate using, forexample, TERA layer trimming is shown. Processing system 1 can comprisea multi-element manufacturing system 10, a deposition system 20 coupledto the multi-element manufacturing system 10, a treatment system 30coupled to the multi-element manufacturing system 10, and an etchingsystem 70 coupled to the multi-element manufacturing system 10.

The treatment system 30 can comprise a transfer module 40, a thermaltreatment module 50, and a chemical treatment module 60. Also, asillustrated in FIG. 1, the transfer module 40 can be coupled to thethermal treatment module 50 in order to transfer substrates into and outof the thermal treatment module 50 and the chemical treatment module 60,and exchange substrates with a multi-element manufacturing system 10.

As should be apparent to those skilled in the art, the multi-elementmanufacturing system 10 can comprise additional processing elements (notshown) including such devices as etch systems, deposition systems,coating systems, cleaning systems, polishing systems, patterningsystems, metrology systems, alignment systems, lithography systems, andtransfer systems. Also, the multi-element manufacturing system 10 canpermit the transfer of substrates to and from the processing elements(20, 30, and 70) and the additional processing elements (not shown).

As should be appreciated by those skilled in the art, the exact type andarrangement of components for processing system 1 may vary withoutdeparting from the scope of the invention. As such, processing system 1is not limited solely to components 20, 30, 40, 50, 60 and 70 asdescribed or the layout depicted. The invention is intended to encompassa plethora of variations too numerous to list here.

In one embodiment, deposition system 20 can comprise a chemical vapordeposition (CVD) system, a plasma enhanced chemical vapor deposition(PECVD) system, a physical vapor deposition (PVD) system, an ionizedphysical vapor deposition (iPVD) system, or an atomic layer deposition(ALD) system, or a combination of two or more thereof. The process gascan comprise an oxygen-containing gas, a nitrogen containing gas, afluorine-containing gas, or a chlorine-containing gas, or a combinationof two or more thereof. Alternately, an inert gas can also be included.

For example, an oxygen-containing gas can comprise O₂, CO, NO, N₂O, orCO₂, or a combination of two or more thereof. The nitrogen-containinggas can comprise NO, N₂O, N₂, or NF₃, or a combination of two or morethereof. The fluorine-containing gas can comprise NF₃, SF₆, CHF₃, orC₄F₈, or a combination of two or more thereof. It will be appreciatedthat similar combinations to the fluorine-containing gas can be used forthe chlorine-containing gas. Moreover, hybrids of gas containing bothfluorine and chlorine may be employed.

The flow rate for an oxygen-containing gas can vary from approximately 0sccm to approximately 500 sccm and alternately from approximately 0 sccmto approximately 300 sccm. The flow rate for an nitrogen-containing gascan vary from approximately 0 sccm to approximately 200 sccm andalternately from approximately 0 sccm to approximately 100 sccm. Theflow rate for a fluorine-containing gas can vary from approximately 0sccm to approximately 200 sccm and alternately from approximately 0 sccmto approximately 100 sccm. The flow rate for a chlorine-containing gascan vary from approximately 0 sccm to approximately 200 sccm andalternately from approximately 0 sccm to approximately 100 sccm.

In order to isolate the processes occurring in the deposition system 20,an isolation assembly 25 can be utilized to couple the deposition system20 to the multi-element manufacturing system 10. The isolation assembly25 can comprise a thermal insulation assembly to provide thermalisolation and/or a gate valve assembly to provide vacuum isolation. Inalternate embodiments, the processing element 20 can comprise multiplemodules.

As indicated above, in one embodiment, the treatment system 30 cancomprise the transfer module 40, the thermal treatment module 50, whichmay be a physical heat treatment (PHT) module, and the chemicaltreatment module 60, which may be a chemical oxide removal (COR) module.In order to isolate the processes occurring in the different modules,isolation assemblies 35, 45, 55 can be utilized to couple the differentmodules. The isolation assembly 35 can be used to couple the transfermodule 40 to the multi-element manufacturing system 10; the isolationassembly 45 can be used to couple the transfer module 40 to the PHTmodule 50; and the isolation assembly 55 can be used to couple the PHTmodule 50 to the COR module 60. The isolation assemblies 35, 45, 55 cancomprise a thermal insulation assembly to provide thermal isolationand/or a gate valve assembly to provide vacuum isolation. In alternateembodiments, a different number of isolation assemblies 35, 45, 55 canbe used.

In general, the transfer module 40 and/or the PHT module 50 of theprocessing system 1 depicted in FIG. 1 can comprise at least twotransfer openings to permit the passage of the substrate therethrough.For example, as depicted in FIG. 1, the PHT module 50 comprises twotransfer openings. The first transfer opening permits the passage of thesubstrate between the PHT module 50 and the transfer system 40, and thesecond transfer opening permits the passage of the substrate between thePHT module 50 and the COR module 60. Alternately, each treatment systemelement can comprise at least one transfer opening to permit the passageof the substrate therethrough.

In one embodiment, the transfer system 40, the PHT module 50, and theCOR module 60 can be configured as in-line elements. Alternately, thetransfer system 40, the PHT module 50, and the COR module 60 can beconfigured in any number of arrangements. For example, a stackedarrangement or a side-by-side arrangement can be used.

In one embodiment, the etching system 70 can comprise a dry etchingsystem and/or a wet etching system. For example, the etching system 70can comprise a plasma etching system. In order to isolate the processesoccurring in the etching system 70, an isolation assembly 65 can beutilized to couple the etching system 70 to the multi-elementmanufacturing system 10. The isolation assembly 65 can comprise athermal insulation assembly to provide thermal isolation and/or a gatevalve assembly to provide vacuum isolation. In alternate embodiments,the etching system 70 can comprise multiple modules.

In the embodiment shown in FIG. 1, a controller 90 can be coupled to themulti-element manufacturing system 10, the deposition system 20, thetransfer module 40, the PHT module 50, the COR module 60, and theetching system 70. For example, the controller 90 can be used to controlthe multi-element manufacturing system 10, the deposition system 20, thetransfer module 40, the PHT module 50, the COR module 60, and theetching system 70. The controller 90 can also be connected to variouscomponents in any of a number of different ways without departing fromthe scope of the invention.

Additionally, the multi-element manufacturing system 10 can exchangesubstrates with one or more substrate cassettes (not shown).Additionally, for example, an isolation assembly can serve as part of aprocessing element.

FIG. 2 illustrates a simplified flow diagram of a method for operating aprocessing system in accordance with an embodiment of the invention. Inthe illustrated embodiment, a procedure is shown for reducing the sizeof features on a TERA layer..

Procedure 200 begins at task 210. In task 220, a TERA layer is depositedon a substrate. TERA layers can be deposited on top of many differentlayers of a substrate. For example, a TERA layer can be deposited on anoxide layer, a dielectric layer, or a metallic layer. The deposition ofthe TERA layer is discussed in greater detail herein.

Features are then created in a TERA layer, as indicated by task 230. Inone embodiment, a photoresist layer can be deposited on the TERA layerand a pattern may be transferred into the photoresist layer using atleast one photolithography step The pattern can be developed to formfeatures in the photoresist layer; and an etching process can be used tocreate features in the TERA layer. In an alternate embodiment, a hardmask layer can be deposited on the TERA layer.

While performing process 200, a stabilization step can be performedbefore and/or after an individual processing step. Alternately, thestabilization step may be avoided altogether.

Stabilization processes may encompass a variety of operationalparameters, such as process time and chamber pressure. For example, theprocess time can vary from approximately 2 seconds to approximately 150seconds and alternately from approximately 4 seconds to approximately 15seconds. The chamber pressure can vary from approximately 2 mTorr toapproximately 800 mTorr and alternately from approximately 10 mTorr toapproximately 90 mTorr.

As discussed at length above, the process gas can comprise anoxygen-containing gas, a nitrogen containing gas, a fluorine-containinggas, or a chlorine-containing gas, or a combination of two or morethereof. Alternately, an inert gas can also be included. For example, anoxygen-containing gas can comprise O₂, CO, NO, N₂O, or CO₂, or acombination of two or more thereof; the nitrogen-containing gas cancomprise NO, N₂O, N₂, or NF₃, or a combination of two or more thereof;and the fluorine-containing gas can comprise NF₃, SF₆, CHF₃, or C₄F₈, ora combination of two or more thereof. The chlorine-containing gas cancomprise similar combinations as the fluorine-containing gas.

The flow rate for an oxygen-containing gas can vary from approximately 0sccm to approximately 500 sccm and alternately from approximately 0 sccmto approximately 300 sccm. The flow rate for an nitrogen-containing gascan vary from approximately 0 sccm to approximately 200 sccm andalternately from approximately 0 sccm to approximately 100 sccm. Theflow rate for a fluorine-containing gas can vary from approximately 0sccm to approximately 200 sccm and alternately from approximately 0 sccmto approximately 100 sccm. The flow rate for a chlorine-containing gascan vary from approximately 0 sccm to approximately 200 sccm andalternately from approximately 0 sccm to approximately 100 sccm.

In one embodiment, a photoresist trim process can be performed.Alternately, the photoresist trim process can be avoided altogether.Photoresist processes may also encompass a variety of operationalparameters, such as process time and chamber pressure. For example, theprocess time can vary from approximately 0 seconds to approximately 180seconds and alternately from approximately 10 seconds to approximately40 seconds. The chamber pressure can vary from approximately 10 mTorr toapproximately 120 mTorr and alternately from approximately 10 mTorr toapproximately 90 mTorr. Also, as discussed above, the process gas cancomprise an oxygen-containing gas, a nitrogen-containing gas and/or aninert gas. And, the flow rates for an oxygen-containing gas can varyfrom approximately 0 sccm to approximately 500 sccm and alternately fromapproximately 0 sccm to approximately 300 sccm, while the flow rates fora nitrogen-containing gas can vary from approximately 0 sccm toapproximately 1000 sccm and alternately from approximately 0 sccm toapproximately 200 sccm.

RF power can be supplied to an upper electrode and the upper RF powercan vary from approximately 0 watts to approximately 1500 watts andalternately from approximately 100 watts to approximately 300 watts. Inaddition, RF power can be supplied to a lower electrode and the lower RFpower can vary from approximately 0 watts to approximately 500 watts andalternately from approximately 40 watts to approximately 150 watts.

In one embodiment, a TERA cap etch process can be performed.Alternately, the TERA cap etch process may be avoided altogether. TheTERA cap etch process may also encompass a variety of operationalparameters, such as process time and chamber pressure. For example, theprocess time can vary from approximately 0 seconds to approximately 50seconds and alternately from approximately 0 seconds to approximately 18seconds. The chamber pressure can vary from approximately 10 mTorr toapproximately 120 mTorr and alternately from approximately 10 mTorr toapproximately 90 mTorr.

Also, as discussed above, the process gas can comprise anoxygen-containing gas, a nitrogen-containing gas, a fluorine-containinggas, or a chlorine-containing gas, an inert gas, or a combination of twoor more thereof. And the flow rate for an oxygen-containing gas can varyfrom approximately 0 sccm to approximately 500 sccm and alternately fromapproximately 0 sccm to approximately 300 sccm. The flow rate for anitrogen-containing gas can vary from approximately 0 sccm toapproximately 200 sccm and alternately from approximately 0 sccm toapproximately 100 sccm. The flow rate for a fluorine-containing gas canvary from approximately 0 sccm to approximately 200 sccm and alternatelyfrom approximately 0 sccm to approximately 100 sccm. The flow rate for achlorine-containing gas can vary from approximately 0 sccm toapproximately 200 sccm and alternately from approximately 0 sccm toapproximately 100 sccm.

In task 240, the size of the features in the TERA layer can be reduced.In one embodiment, the exposed surfaces of the features in the TERAlayer can be oxidized, and a removal process can be performed to removeat least a part of the oxidized portion of the TERA features. A trimmingamount can be established and the oxidation process can be controlled sothat the correct trimming amount is achieved. During a removal process,a chemical oxide removal (COR) process can be performed. In an alternateembodiment, the oxidation process and the COR process can be performed anumber of times to reduce the size of the features in the TERA layer topredetermined dimensions.

During an exemplary TERA oxidation process, the process time can varyfrom approximately 0 seconds to approximately 180 seconds andalternately from approximately 0 seconds to approximately 18 seconds.The chamber pressure can vary from approximately 10 mtorr toapproximately 300 mtorr and alternately from approximately 150 mtorr toapproximately 250 mtorr. The process gas can comprise anoxygen-containing gas. Alternately, an inert gas can also be included.The flow rate for an oxygen-containing gas can vary from approximately0.0 sccm to approximately 500 sccm and alternately from approximately150 sccm to approximately 300 sccm. RF power can be supplied to an upperelectrode and the upper RF power can vary from approximately 0.0 wattsto approximately 1500 watts and alternately from approximately 200 wattsto approximately 400 watts. In addition, RF power can be supplied to alower electrode and the lower RF power can vary from approximately 0.0watts to approximately 500 watts and alternately from approximately 30watts to approximately 100 watts.

During the oxidation process, the TERA layer can be partially or fullyoxidized. For example, TERA layers ranging from approximately 1 nm toapproximately 5 nm can be fully oxidized in less than 12 seconds. TheCOR process does not remove non-oxidized TERA material. The COR processcan be used to remove all or part of the oxidized TERA layer, as wouldbe appreciated by those skilled in the art.

For example, the transfer module 40, the PHT module 50, and the CORmodule 60 can be used to perform a removal process. The removal processcan use a COR recipe to perform the processing and the COR recipe canbegin when a substrate is transferred to the COR module. The substratecan be received by lift pins that are housed within a substrate holder,and the substrate can be lowered to the substrate holder. Thereafter,the substrate can be secured to the substrate holder using a clampingsystem, such as an electrostatic clamping system, and a heat transfergas can be supplied to the backside of the substrate.

Next, the COR recipe can be used to set one or more chemical processingparameters for the chemical treatment of the substrate, and theseparameters can include a chemical treatment processing pressure, achemical treatment wall temperature, a chemical treatment substrateholder temperature, a chemical treatment substrate temperature, achemical treatment gas distribution system temperature, a chemicaltreatment process gas, or a chemical treatment process gas flow rate, ora combination of two or more thereof. Then, the substrate can bechemically treated for a first period of time. The first period of timecan range from 30 to 360 seconds, for example.

Next, the substrate can be transferred from the chemical treatmentchamber to the PHT module 50. During which time, the substrate clamp canbe removed, and the flow of heat transfer gas to the backside of thesubstrate can be terminated. The substrate can be vertically lifted fromthe substrate holder to the transfer plane using the lift pin assemblyhoused within the substrate holder. The transfer system can receive thesubstrate from the lift pins and can position the substrate within thePHT module. Therein, a substrate lifter assembly can receive thesubstrate from the transfer system, and can lower the substrate to thesubstrate holder.

Then, the PHT recipe can be used to set one or more thermal processingparameters for thermal treatment of the substrate by the PHT module. Inthe PHT recipe, the substrate can be treated thermally for a secondperiod of time. For example, the one or more thermal processingparameters can comprise a thermal treatment wall temperature, a thermaltreatment upper assembly temperature, a thermal treatment substratetemperature, a thermal treatment substrate holder temperature, a thermaltreatment substrate temperature, a thermal treatment processingpressure, a thermal treatment process gas, or a thermal treatmentprocess gas flow rate, or a combination of two or more thereof. Thesecond period of time can range from 30 to 360 seconds, for example.

In an exemplary process, the treatment system 30 can comprise a chemicaloxide removal (COR) system for trimming an oxidized TERA film. Thetreatment system 30 can comprise the COR module 50 for chemicallytreating exposed surface layers, such as oxidized surface layers, on asubstrate, whereby adsorption of the process chemistry on the exposedsurfaces affects a chemical alteration of the surface layers.Additionally, the treatment system 30 can comprise the PHT module 60 forthermally treating the substrate, whereby the substrate temperature iselevated in order to desorb (or evaporate) the chemically alteredexposed surfaces on the substrate.

In one embodiment, a COR module can use a process gas comprising HF andNH₃, and the processing pressure can range from approximately 1 toapproximately 100 mTorr and, for example, can range from approximately 2to approximately 25 mTorr. The process gas flow rates can range fromapproximately 1 to approximately 200 sccm for each specie and, forexample, can range from approximately 10 to approximately 100 sccm. Inaddition, a substantially uniform pressure field can be achieved.Additionally, the COR module chamber can be heated to a temperatureranging from 30° to 100° C. and, for example, the temperature can beapproximately 40° C. Additionally, the gas distribution system can beheated to a temperature ranging from approximately 40° to approximately100° C. and, for example, the temperature can be approximately 50° C.The substrate can be maintained at a temperature ranging fromapproximately 10° to approximately 50° C. and, for example, thesubstrate temperature can be approximately 20° C.

In addition, in the PHT module 50, the thermal treatment chamber can beheated to a temperature ranging from approximately 50° to approximately100° C. and, for example, the temperature can be approximately 80° C.Additionally, the upper assembly can be heated to a temperature rangingfrom approximately 50° to approximately 100° C. and, for example, thetemperature can be approximately 80° C. The substrate can be heated to atemperature in excess of approximately 100° C. Alternatively, thesubstrate can be heated in a range from approximately 100° toapproximately 200° C., and, for example, the temperature can beapproximately 135° C.

The COR and PHT processes described herein can produce an etch amount ofan exposed oxidized surface in excess of approximately 10 nm per 60seconds of chemical treatment for oxidized TERA. The treatments can alsoproduce an etch variation across the substrate of less thanapproximately 2.5 percent.

FIGS. 3A-3F illustrate simplified schematic views of a method forprocessing a substrate in accordance with an embodiment of theinvention. In FIG. 3A, a simplified schematic view of a partiallyprocessed semiconductor device is shown. In the illustrated embodiment,the semiconductor device has been processed using a photoresistdevelopment process and an etch process. A substrate layer 310 is shown,and the substrate layer can comprise silicon (Si), germanium (Ge), orgallium arsenide (GaAs), or a combination of two or more thereof. Anadditional layer 320 is shown on top of the substrate layer 310. Theadditional layer can comprise one or more layers and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof.

A TERA layer 330 is shown on top of the additional layer, and the TERAlayer can comprise TERA features 332. In addition, a photoresist layer340 is shown on top of the TERA layer 330, and the photoresist layer 340can comprise photoresist features 342. For example, the photoresistfeatures 342 can be produced when the photoresist layer is developed,and the TERA features 332 can be produced when the photoresist features342 are transferred into the TERA layer 330 using an etch process.

In FIG. 3B, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an etching process.Features 332 have been created in the TERA layer 330A by transferringthe photoresist features 342 using an etch process. A substrate layer310 is shown, and the substrate layer can comprise of silicon (Si),germanium (Ge), or gallium arsenide (GaAs), or a combination of two ormore thereof. An additional layer 320 is shown on top of the substratelayer 310. The additional layer can comprise one or more layers and eachlayer can comprise an oxide, a metal, or a dielectric material, or acombination of two or more thereof.

A processed (etched) TERA layer 330A is shown on top of the additionallayer, and the processed TERA layer 330A can comprise features 332. Inaddition, a photoresist layer 340 is shown on top of the processed TERAlayer 330A, and the photoresist layer 340 can comprise photoresistfeatures 342.

In FIG. 3C, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an oxidation process. Thephotoresist features have been removed by the oxidation (ashing)process, and oxidized areas 333 and 335 have been created in the TERAfeatures 332 in the TERA layer 330B. The oxidized areas 333 on the sidesof the TERA feature can have a different thickness than the oxidizedareas 335 on the top of the TERA features. For example, the top portionof the TERA layer can comprise a cap portion that has a higherresistance to etching than the other portions of the TERA layer.

In FIG. 3C, a substrate layer 310 is shown, and the substrate layer cancomprise silicon (Si), germanium (Ge), or gallium arsenide (GaAs), or acombination of two or more thereof. An additional layer 320 is shown ontop of the substrate layer 310. The additional layer can comprise one ormore layers and each layer can comprise an oxide, a metal, or adielectric material, or a combination of two or more thereof. Aprocessed TERA layer 330B is shown on top of the additional layer, andthe processed TERA layer 330B can comprise features 332 having oxidizedareas 333 and 335.

In FIG. 3D, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using a COR process. Oxidizedareas have been removed creating reduced TERA features 337 in the TERAlayer 330C by removing the oxidized areas of the TERA features using aCOR process. A substrate layer 310 is shown, and the substrate layer cancomprise silicon (Si), germanium (Ge), or gallium arsenide (GaAs), or acombination of two or more thereof. An additional layer 320 is shown ontop of the substrate layer 310. The additional layer can comprise one ormore layers and each layer can comprise an oxide, a metal, or adielectric material, or a combination of two or more thereof. Aprocessed TERA layer 330C is shown on top of the additional layer, andthe processed TERA layer 330C can comprise reduced size TERA features337.

In FIG. 3E, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an etch process, and oneor more of the layers in the additional layer 320 has been etched usingthe reduced size TERA features 337 as a mask. The reduced size TERAfeatures 337 can be used as mask features and a dry etching processand/or a wet etching process can be performed. A substrate layer 310 isshown, and the substrate layer can comprise silicon (Si), germanium(Ge), or gallium arsenide (GaAs), or a combination of two or morethereof.

A processed (etched) additional layer 320A is shown on top of thesubstrate layer 310. The processed (etched) additional layer 320A cancomprise vias 324 and additional layer features 322. The additionallayer features 322 can comprise one or more layers and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. A processed (partially etched) TERA layer 330Cis shown on top of the additional layer, and the processed (partiallyetched) TERA layer 330C can comprise reduced size TERA features 337. Forexample, the additional layer features can comprise a nitride layer anda doped poly layer.

In FIG. 3F, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using a removal process, and thereduced size TERA features 337 have been removed. A substrate layer 310is shown, and the substrate layer can comprise silicon (Si), germanium(Ge), or gallium arsenide (GaAs), or a combination of two or morethereof. A processed (etched) additional layer 320A is shown on top ofthe substrate layer 310. The processed (etched) additional layer 320Acan comprise vias 324 and additional layer features 322. The additionallayer features 322 can comprise one or more layers and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. In this manner, reduced size features can becreated in the additional layer and smaller critical dimensions (gatewidths) can be achieved. In one embodiment, further processing can beperformed.

FIGS. 4A-4G illustrate simplified schematic views of a method forprocessing a substrate in accordance with another embodiment of theinvention.

In FIG. 4A, a simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using a hard mask developmentprocess. A substrate layer 410 is shown, and the substrate layer cancomprise silicon (Si), germanium (Ge), or gallium arsenide (GaAs), or acombination of two or more thereof. An additional layer 420 is shown ontop of the substrate layer 410. The additional layer can comprise one ormore layers, and each layer can comprise an oxide, a metal, or adielectric material, or a combination of two or more thereof. A TERAlayer 430 is shown on top of the additional layer, and the TERA layercan be used as a hard mask. In addition, a hard mask layer 440 is shownon top of the TERA layer 430, and the hard mask layer 440 can comprisehard mask features 442. For example, the hard mask features 442 can beproduced using a photoresist layer (not shown).

In FIG. 4B, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an etching process.Features 432 have been created in the TERA layer 430A by transferringthe hard mask features 442 using an etch process. A substrate layer 410is shown, and the substrate layer can comprise silicon (Si), germanium(Ge), or gallium arsenide (GaAs), or a combination of two or morethereof.

An additional layer 420 is shown on top of the substrate layer 410. Theadditional layer can comprise one or more layers, and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. In addition, a photoresist layer 440 is shown ontop of the processed TERA layer 430A, and the photoresist layer 440 cancomprise photoresist features 442.

In FIG. 4C, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an oxidation process.Oxidized areas 435 have been created in the TERA features 432 in theTERA layer 430B by oxidizing the exposed surfaces of the TERA features432 using an oxidation process. A substrate layer 410 is shown, and thesubstrate layer can comprise silicon (Si), germanium (Ge), or galliumarsenide (GaAs), or a combination of two or more thereof.

An additional layer 420 is shown on top of the substrate layer 410. Theadditional layer can comprise one or more layers, and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. A processed TERA layer 430B is shown on top ofthe additional layer, and the processed TERA layer 430B can comprisefeatures 432 having oxidized areas 435. In addition, a photoresist layer440 is shown on top of the processed TERA layer 430B, and thephotoresist layer 440 can comprise photoresist features 442.

In FIG. 4D, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using a COR process. Oxidizedareas can be removed using a COR process thereby creating reduced sizeTERA features 437 in the TERA layer 430C. Alternately, anothersubstantially lateral etch process can be performed in which theoxidized areas 435 can be removed creating the reduced TERA features 437in the TERA layer 430C. A substrate layer 410 is shown, and thesubstrate layer can comprise silicon (Si), germanium (Ge), or galliumarsenide (GaAs), or a combination of two or more thereof.

An additional layer 420 is shown on top of the substrate layer 410. Theadditional layer can comprise one or more layers, and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. A processed (laterally etched) TERA layer 430Cis shown on top of the additional layer, and the processed (laterallyetched) TERA layer 430C can comprise reduced size TERA features 437. Inaddition, hard mask features can be shown on top of the reduced sizeTERA features 437.

In FIG. 4E, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using a removal process, and thehard mask features 442 have been removed. The hard mask features can beremoved using an ashing process, a dry etching process, or a wet etchingprocess, or a combination of two or more thereof. A substrate layer 410is shown, and the substrate layer can comprise silicon (Si), germanium(Ge), or gallium arsenide (GaAs), or a combination of two or morethereof.

An additional layer 420 is shown on top of the substrate layer 410. Theadditional layer can comprise one or more layers, and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. A processed (laterally etched) TERA layer 430Cis shown on top of the additional layer, and the processed (laterallyetched) TERA layer 430C can comprise reduced size TERA features 437. InFIG. 4E, hard mask features have been removed from the top surfaces ofthe reduced size TERA features 437.

In FIG. 4F, another simplified schematic view of a partially processedsemiconductor device is shown. In the illustrated embodiment, thesemiconductor device has been processed using an etch process, and theadditional layer 420 has been etched using the reduced size TERAfeatures 437 as a mask. The reduced size TERA features 437 can be usedas mask features and a dry etching process and/or a wet etching processcan be performed. A substrate layer 410 is shown, and the substratelayer can comprise silicon (Si), germanium (Ge), or gallium arsenide(GaAs), or a combination of two or more thereof.

A processed (etched) additional layer 420A is shown on top of thesubstrate layer 410. The processed (etched) additional layer 420A cancomprise vias 424 and additional layer features 422. The additionallayer features 422 can comprise one or more layers, and each layer cancomprise an oxide, a metal, or a dielectric material, or a combinationof two or more thereof. A processed (laterally etched) TERA layer 430Cis shown on top of the additional layer, and the processed (laterallyetched) TERA layer 430C can comprise reduced size TERA features 437. Forexample, the additional layer features can comprise a nitride layer anda doped poly layer.

In FIG. 4G, another simplified schematic view of a partially processedsemiconductor device is shown.

In the illustrated embodiment, the semiconductor device has beenprocessed using a removal process, and the reduced size TERA features437 have been removed. A substrate layer 410 is shown, and the substratelayer can comprise silicon (Si), germanium (Ge), or gallium arsenide(GaAs), or a combination of two or more thereof. A processed (etched)additional layer 420A is shown on top of the substrate layer 410. Theprocessed (etched) additional layer 420A can comprise vias 424 andadditional layer features 422. The additional layer features 422 cancomprise one or more layers, and each layer can comprise an oxide, ametal, or a dielectric material, or a combination of two or morethereof. In this manner, reduced size features can be created in theadditional layer and smaller critical dimensions (gate widths) can beachieved.

FIG. 5 illustrates a simplified block diagram of a PECVD system inaccordance with an embodiment of the invention. In the illustratedembodiment, the PECVD system 500 comprises a processing chamber 510, anupper electrode 540 as part of a capacitively coupled plasma source, ashower plate assembly 520, a substrate holder 530 for supporting asubstrate 535, a pressure control system 580, and a controller 590.

In one embodiment, the PECVD system 500 can comprise a remote plasmasystem 575 that can be coupled to the processing chamber 510 using avalve 578. In another embodiment, a remote plasma system and valve arenot included.

In one embodiment, the PECVD system 500 can comprise the pressurecontrol system 580 that can be coupled to the processing chamber 510.For example, the pressure control system 580 can comprise a throttlevalve (not shown) and a turbomolecular pump (TMP) (not shown) and canprovide a controlled pressure in processing chamber 510. In alternateembodiments, the pressure control system 580 can comprise a dry pump(not shown). For example, the chamber pressure can range fromapproximately 0.1 mTorr to approximately 100 mTorr. Alternatively, thechamber pressure can range from approximately 0.1 mTorr to approximately20 mTorr.

The processing chamber 510 can facilitate the formation of plasma in theprocess space 502. The PECVD system 500 can be configured to processsubstrates of any size, such as 200 mm substrates, 300 mm substrates, orlarger substrates. Alternately, the PECVD system 500 can operate bygenerating plasma in one or more processing chambers.

The PECVD system 500 comprises the shower plate assembly 520 coupled tothe processing chamber 510. The shower plate assembly 520 is mountedopposite the substrate holder 530. The shower plate assembly 520comprises a center region 522, an edge region 524, and a sub region 526.A shield ring 528 can be used to couple the shower plate assembly 520 tothe processing chamber 510.

The center region 522 is coupled to a gas supply system 531 by a firstprocess gas line 523. The edge region 524 is coupled to the gas supplysystem 531 by a second process gas line 525. The sub region 526 iscoupled to the gas supply system 531 by a third process gas line 527.

The gas supply system 531 provides a first process gas to the centerregion 522, a second process gas to the edge region 524, and a thirdprocess gas to the sub region 526. The gas chemistries and flow ratescan be individually controlled to these regions. Alternately, the centerregion 522 and the edge region 524 can be coupled together as a singleprimary region, and the gas supply system 531 can provide the firstprocess gas and/or the second process gas to the primary region. Inalternate embodiments, any of the regions can be coupled together andthe gas supply system 531 can provide one or more process gasses, asappropriate.

The gas supply system 531 can comprise at least one vaporizer (notshown) for providing precursors. Alternately, a vaporizer is notrequired. In an alternate embodiment, a bubbling system can be used.

The PECVD system 500 comprises an upper electrode 540 that can becoupled to the shower plate assembly 520 and also to the processingchamber 510. The upper electrode 540 can comprise temperature controlelements 542. The upper electrode 540 can be coupled to a first RFsource 546 using a first match network 544. As would be appreciated bythose skilled in the art, the first match network 544 need not beprovided between the first RF source 546 and the upper electrode 540.

The first RF source 546 provides a TRF signal to the upper electrode540, and the first RF source 546 can operate in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz. The TRF signal can bein the frequency range from approximately 1 MHz. to approximately 100MHz. or alternatively in the frequency range from approximately 2 MHz.to approximately 60 MHz. The first RF source 546 can operate in a powerrange from approximately 0 watts to approximately 10000 watts, oralternatively the first RF source 546 can operate in a power range fromapproximately 0 watts to approximately 5000 watts.

The upper electrode 540 and the RF source 546 are parts of acapacitively-coupled plasma source. The capacitively-coupled plasmasource may be replaced with or augmented by other types of plasmasources, such as an inductively coupled plasma (ICP) source, atransformer-coupled plasma (TCP) source, a microwave powered plasmasource, an electron cyclotron resonance (ECR) plasma source, a Heliconwave plasma source, and a surface wave plasma source. As is well knownin the art, the upper electrode 540 may be eliminated or reconfigured inthe various suitable plasma sources.

The substrate 535 can be, for example, transferred into and out of theprocessing chamber 510 through a slot valve (not shown) and chamberfeed-through (not shown) via a robotic substrate transfer system (notshown), and it can be received by the substrate holder 530 andmechanically translated by devices coupled thereto. Once the substrate535 is received from the substrate transfer system, the substrate 535can be raised and/or lowered using a translation device 550 that can becoupled to the substrate holder 530 by a coupling assembly 552.

The substrate 535 can be held or affixed to the substrate holder 530 viaan electrostatic clamping system. For example, the electrostaticclamping system can comprise an electrode 516 and an ESC supply 556.Clamping voltages that can range from approximately −2000 V toapproximately +2000 V, for example, can be provided to the clampingelectrode 516. Alternatively, the clamping voltage can range fromapproximately −1000 V to approximately +1000 V. In alternateembodiments, the ESC system and the ESC supply 556 are not required.

The substrate holder 530 can comprise lift pins (not shown) for loweringand/or raising the substrate 535 to and/or from the surface of thesubstrate holder 530. In alternate embodiments, different liftingdevices can be provided in the substrate holder 530, as would beappreciated by those skilled in the art. In alternate embodiments, gascan, for example, be delivered to the backside of the substrate 535 viaa backside gas system to improve the gas-gap thermal conductance betweenthe substrate 535 and the substrate holder 530.

A temperature control system can also be provided. Such a system can beutilized when temperature control of the substrate 535 is required atelevated or reduced temperatures. For example, a heating element 532,such as resistive heating elements, or thermo-electric heaters/coolerscan be included, and the substrate holder 530 can further include a heatexchange system 534. The heating element 532 can be coupled to a heatersupply 558. The heat exchange system 534 can include re-circulatingcoolant flow passages that receive heat from the substrate holder 530and transfer the heat to a heat exchanger system (not shown), or whenheating, transfers the heat from the heat exchanger system to thesubstrate holder 530.

Also, the electrode 516 can be coupled to a second RF source 560 using asecond match network 562. Alternately, the second match network 562 isnot required.

The second RF source 560 provides a bottom RF signal (BRF) to the lowerelectrode 516, and the second RF source 560 can operate in a frequencyrange from approximately 0.1 MHz. to approximately 200 MHz. The BRFsignal can be in the frequency range from approximately 0.2 MHz. toapproximately 30 MHz. or alternatively, in the frequency range fromapproximately 0.3 MHz. to approximately 15 MHz. The second RF source 560can operate in a power range from approximately 0.0 watts toapproximately 1000 watts, or alternatively, the second RF source 560 canoperate in a power range from approximately 0.0 watts to approximately500 watts. In various embodiments, the lower electrode 516 may not beused, or may be the sole source of plasma within the chamber 510, or mayaugment any additional plasma source.

The PECVD system 500 can further comprise the translation device 550that can be coupled by a bellows 554 to the processing chamber 510.Also, coupling assembly 552 can couple the translation device 550 to thesubstrate holder 530. The bellows 554 are configured to seal thevertical translation device 550 from the atmosphere outside theprocessing chamber 510.

The translation device 550 allows a variable gap 504 to be establishedbetween the shower plate assembly 520 and the substrate 535. The gap 504can range from approximately 10 mm to approximately 200 mm, andalternatively, the gap 504 can range from approximately 20 mm toapproximately 80 mm. The gap 504 can remain fixed or the gap 504 can bechanged during a deposition process.

Additionally, the substrate holder 530 can further comprise a focus ring506 and a ceramic cover 508. Alternately, the focus ring 506 and/or theceramic cover 508 need not be included, as would be appreciated by thoseskilled in the art.

At least one chamber wall 512 can comprise a coating 514 to protect thewall. For example, the coating 514 can comprise a ceramic material. Inan alternate embodiment, the coating 514 is not required. Furthermore, aceramic shield (not shown) can be used within the processing chamber510.

In addition, the temperature control system can be used to control thechamber wall 512 temperature. For example, ports can be provided in thechamber wall 512 for controlling temperature. The chamber wall 512temperature can be maintained relatively constant while a process isbeing performed in the chamber 510.

Also, the temperature control system can be used to control thetemperature of the upper electrode 540. The temperature control elements542 can be used to control the upper electrode 540 temperature. Theupper electrode 540 temperature can be maintained relatively constantwhile a process is being performed in the chamber 510.

In addition, the PECVD system 500 can also comprise the remote plasmasystem 575 that can be used for chamber 510 cleaning.

Furthermore, the PECVD system 500 can also comprise a purging system(not shown) that can be used for controlling contamination and/orchamber 510 cleaning.

In an alternate embodiment, the processing chamber 510 can, for example,further comprise a monitoring port (not shown). The monitoring port can,for example, permit optical monitoring of the process space 502.

The PECVD system 500 also comprises the controller 590. The controller590 can be coupled to the chamber 510, the shower plate assembly 520,the substrate holder 530, the gas supply system 531, the upper electrode540, the first RF match 544, the first RF source 546, the translationdevice 550, the ESC supply 556, the heater supply 558, the second RFmatch 562, the second RF source 560, the purging system 595, the remoteplasma device 575, and the pressure control system 580. The controller590 can be configured to provide control data to these components andreceive data such as process data from these components. For example,the controller 590 can comprise a microprocessor, a memory, and adigital I/O port capable of generating control voltages sufficient tocommunicate and activate inputs to the processing system 500 as well asmonitor outputs from the PECVD system 500.

Moreover, the controller 590 can exchange information with systemcomponents. Also, a program stored in the memory can be utilized tocontrol the aforementioned components of the PECVD system 500 accordingto a process recipe. In addition, controller 590 can be configured toanalyze the process data, to compare the process data with targetprocess data, and to use the comparison to change a process and/orcontrol the deposition tool. Also, the controller 590 can be configuredto analyze the process data, to compare the process data with historicalprocess data, and to use the comparison to predict, prevent, and/ordeclare a fault.

During the deposition of a TERA layer, the substrate 535 can be placedon the translatable substrate holder 530. For example, the translatablesubstrate holder 530 can be used to establish the gap between the upperelectrode 540 surface and the surface of the translatable substrateholder 530. The gap 504 can range from approximately 10 mm toapproximately 200 mm, or alternatively, the gap 504 can range fromapproximately 20 mm to approximately 80 mm. In alternate embodiments,the gap 504 size can be changed.

During a TERA layer deposition process, a TRF signal can be provided tothe upper electrode 540 using the first RF source 544. For example, thefirst RF source 544 can operate in a frequency range from approximately0.1 MHz. to approximately 200 MHz. Alternatively, the first RF source544 can operate in a frequency range from approximately 1 MHz. toapproximately 100 MHz., or the first RF source 544 can operate in afrequency range from approximately 2 MHz. to approximately 60 MHz. Thefirst RF source 544 can operate in a power range from approximately 10watts to approximately 10000 watts, or alternatively, the first RFsource 544 can operate in a power range from approximately 10 watts toapproximately 5000 watts

Also, during a TERA layer deposition process, a BRF signal can beprovided to the lower electrode 530 using the second RF source 560. Forexample, the second RF source 560 can operate in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz. Alternatively, thesecond RF source 560 can operate in a frequency range from approximately0.2 MHz. to approximately 30 MHz. or the second RF source can operate ina frequency range from approximately 0.3 MHz. to approximately 15 MHz.The second RF source 560 can operate in a power range from approximately0.0 watts to approximately 1000 watts, or alternatively, the second RFsource 560 can operate in a power range from approximately 0.0 watts toapproximately 500 watts. In an alternate embodiment, a BRF signal is notrequired.

In addition, a process gas can be provided to the processing chamber 510using the shower plate assembly 520. For example, process gas cancomprise a silicon-containing precursor, a carbon-containing precursor,or oxygen containing gas, or a combination of two or more thereof. Aninert gas can also be included. For example, the flow rate for thesilicon-containing precursor and the carbon-containing precursor canrange from approximately 0 sccm to approximately 5000 sccm and the flowrate for the inert gas can range from approximately 0 sccm toapproximately 10000 sccm. The silicon-containing precursor can comprisemonosilane (SiH₄), tetraethylorthosilicate (TEOS), monomethylsilane(1MS), dimethylsilane (2MS), trimethylsilane (3MS), tetramethylsilane(4MS), octamethylcyclotetrasiloxane (OMCTS), dimethyidimethoxysilane(DMDMOS), or tetramethylcyclotetrasilane (TMCTS), or a combination oftwo or more thereof. The carbon-containing precursor can comprise CH₄,C₂H₄, C₂H₂, C₆H₆, or C₆H₅OH, or a combination of two or more thereof.The inert gas can comprise argon, helium, or nitrogen, or a combinationof two or more thereof. For example, the oxygen containing gas cancomprise at O₂, CO, NO, N₂O, or CO₂, or a combination of two or morethereof, and the flow rate can range from approximately 0 sccm toapproximately 10000 sccm.

The TERA layer can comprise a material having a refractive index (n)ranging from approximately 1.5 to approximately 2.5 when measured at awavelength of at least one of 248 nm, 193 nm, or 157 nm, and anextinction coefficient (k) ranging from approximately 0.10 toapproximately 0.9 when measured at a wavelength of at least one of 248nm, 193 nm, or 157 nm. For example, a TERA layer can comprise a SiCOHmaterial, or a SiCH material, or a combination thereof. The TERA layercan comprise a thickness ranging from approximately 30 nm toapproximately 500 nm, and the deposition rate can range fromapproximately 100 Å/min to approximately 10000 Å/min. The TERA layer cancomprise one or more layers having different etch-resistance and/oroptical properties.

Furthermore, the chamber pressure and substrate temperature can becontrolled during the deposition of the TERA layer. For example, thechamber pressure can range from approximately 0.1 mTorr to approximately100.0 mTorr, and the substrate temperature can range from approximately0° C. to approximately 500° C.

FIG. 6 illustrates a simplified block diagram for a processing system600 in accordance with an embodiment of the invention. In theillustrated embodiment, the processing system 600 for performing achemical treatment and a thermal treatment of a substrate 642 ispresented. The processing system 600 comprises a chemical treatmentsystem 610, and a thermal treatment system 620 coupled to the chemicaltreatment system 610. The chemical treatment system 610 comprises achemical treatment chamber 611, which can be temperature-controlled. Thethermal treatment system 620 comprises a thermal treatment chamber 621,which can be temperature-controlled. The chemical treatment chamber 611and the thermal treatment chamber 621 can be thermally insulated fromone another using a thermal insulation assembly 630, and vacuum isolatedfrom one another using a gate valve assembly 696.

As illustrated in FIG. 6, the chemical treatment system 610 furthercomprises a temperature controlled substrate holder 640 configured to besubstantially thermally isolated from the chemical treatment chamber 611and configured to support the substrate 642. A vacuum pumping system 650is coupled to the chemical treatment chamber 611 to evacuate thechemical treatment chamber 611. A gas distribution system 660 is alsoconnected to the chemical treatment chamber 611 for introducing aprocess gas into a process space 662 within the chemical treatmentchamber 611.

Also, the thermal treatment system 620 further comprises a temperaturecontrolled substrate holder 670 mounted within the thermal treatmentchamber 621. The substrate holder 670 is configured to be substantiallythermally insulated from the thermal treatment chamber 621 and isconfigured to support a substrate 642′. A vacuum pumping system 680 isused to evacuate the thermal treatment chamber 621. A substrate lifterassembly 690 is coupled to the thermal treatment chamber 621. The lifterassembly 690 can vertically translate the substrate 642″ between aholding plane (solid lines) and the substrate holder 670 (dashed lines),or a transfer plane located therebetween. The thermal treatment chamber621 can further comprise an upper assembly 684.

Additionally, the chemical treatment chamber 611, thermal treatmentchamber 621, and thermal insulation assembly 630 define a common opening694 through which a substrate 642 can be transferred. During processing,the common opening 694 can be sealed closed using the gate valveassembly 696 in order to permit independent processing in the twochambers 611, 621. Furthermore, a transfer opening 698 can be formed inthe thermal treatment chamber 621 in order to permit substrate exchangeswith a transfer system as illustrated in FIG. 1. For example, a secondthermal insulation assembly 631 can be implemented to thermally insulatethe thermal treatment chamber 621 from a transfer system (not shown).Although the opening 698 is illustrated as part of the thermal treatmentchamber 621, the transfer opening 698 can be formed in the chemicaltreatment chamber 611 and not the thermal treatment chamber 621, or thetransfer opening 698 can be formed in both the chemical treatmentchamber 611 and the thermal treatment chamber 621.

As illustrated in FIG. 6, the chemical treatment system 610 comprisesthe substrate holder 640 and the substrate holder assembly 644 in orderto provide several operational functions for thermally controlling andprocessing the substrate 642. The substrate holder 640 and the substrateholder assembly 644 can comprise an electrostatic clamping system (ormechanical clamping system) in order to electrically (or mechanically)clamp the substrate 642 to the substrate holder 640. Furthermore, thesubstrate holder 640 can, for example, further include a cooling systemhaving a re-circulating coolant flow that receives heat from thesubstrate holder 640 and transfers heat to a heat exchanger system (notshown), or when heating, transfers heat from the heat exchanger system.

Moreover, a heat transfer gas can, for example, be delivered to theback-side of the substrate 642 via a backside gas system to improve thegas-gap thermal conductance between the substrate 642 and the substrateholder 640. For instance, the heat transfer gas supplied to theback-side of the substrate 642 can comprise an inert gas such as helium,argon, xenon, krypton, a process gas, or other gas such as oxygen,nitrogen, or hydrogen. Such a system can be utilized when temperaturecontrol of the substrate 642 is required at elevated or reducedtemperatures. For example, the backside gas system can comprise amulti-zone gas distribution system such as a two-zone (center-edge)system, wherein the back-side gas gap pressure can be independentlyvaried between the center and the edge of the substrate 642. In otherembodiments, heating/cooling elements, such as resistive heatingelements, or thermoelectric heaters/coolers can be included in thesubstrate holder 640, as well as the chamber wall of the chemicaltreatment chamber 611.

Also, the substrate holder 640 can further comprise a lift pin assembly(not shown) capable of raising and lowering three or more lift pins (notshown) in order to vertically translate the substrate 642 to and from anupper surface of the substrate holder 640 and a transfer plane in theprocessing system 600.

In addition, the temperature of the temperature-controlled substrateholder 640 can be monitored using a temperature sensing device (notshown) such as a thermocouple (e.g. a K-type thermocouple, Pt sensor,etc.). Furthermore, a controller can utilize the temperature measurementas feedback to the substrate holder 640 assembly in order to control thetemperature of substrate holder 640. For example, a fluid flow rate,fluid temperature, heat transfer gas type, heat transfer gas pressure,clamping force, resistive heater element current or voltage,thermoelectric device current or polarity, or a combination of two ormore thereof can be adjusted in order to affect a change in thetemperature of substrate holder 640 and/or the temperature of thesubstrate 642.

Referring again to FIG. 6, chemical treatment system 610 comprises a gasdistribution system 660. In one embodiment, a gas distribution system660 can comprise a showerhead gas injection system (not shown). The gasdistribution system 660 can further comprise one or more gasdistribution orifices to distribute a process gas to the process space662 within the chemical treatment chamber 611. Additionally, the processgas can, for example, comprise NH₃, HF, H₂, O₂, CO, CO₂, Ar, He, etc.

As shown in FIG. 6, the chemical treatment system 620 further comprisesthe temperature controlled chemical treatment chamber 611 that ismaintained at an elevated temperature. For example, a wall heatingelement 666 can be coupled to a wall temperature control unit 668, andthe wall heating element 666 can be configured to couple to the chemicaltreatment chamber 611. The heating element 666 can, for example,comprise a resistive heater element such as a tungsten, nickel-chromiumalloy, aluminum-iron alloy, aluminum nitride, etc., filament. Examplesof commercially available materials to fabricate resistive heatingelements include Kanthal, Nikrothal, Akrothal, which are registeredtrademark names for metal alloys produced by Kanthal Corporation ofBethel, CT. The Kanthal family includes ferritic alloys (FeCrAI) and theNikrothal family includes austenitic alloys (NiCr, NiCrFe).

When an electrical current flows through the filament, power isdissipated as heat, and, therefore, the wall temperature control unit668 can, for example, comprise a controllable DC power supply. Forexample, wall heating element 666 can comprise at least one Firerodcartridge heater commercially available from Watlow (1310 Kingsland Dr.,Batavia, Ill., 60510). A cooling element can also be employed in thechemical treatment chamber 611. The temperature of the chemicaltreatment chamber 611 can be monitored using a temperature-sensingdevice such as a thermocouple (e.g. a K-type thermocouple, Pt sensor,etc.). Furthermore, a controller can utilize the temperature measurementas feedback to the wall temperature control unit 668 in order to controlthe temperature of the chemical treatment chamber 611.

Referring again to FIG. 6, the chemical treatment system 610 can furthercomprise a temperature controlled gas distribution system 660 that canbe maintained at any selected temperature.

Furthermore, in FIG. 6, the vacuum pumping system 650 is shown that cancomprise a vacuum pump 652 and a gate valve 654 for throttling thechamber pressure. The vacuum pump 652 can, for example, include aturbo-molecular vacuum pump (TMP) capable of a pumping speed up to 5000liters per second (and greater). For example, the TMP can be a SeikoSTP-A803 vacuum pump, or an Ebara ET1301W vacuum pump. TMPs are usefulfor low pressure processing, typically less than 50 mTorr. For highpressure (i.e., greater than 100 mTorr) or low throughput processing(i.e., no gas flow), a mechanical booster pump and dry roughing pump canbe used.

In one embodiment, the processing system 600 can be controlled using acontroller, such as controller 90 in FIG. 1. In an alternate embodiment,the processing system 600 can comprise a controller (not shown) that canbe coupled to the chemical treatment system 610 and the thermaltreatment system 620. For example, the controller can comprise aprocessor, memory, and a digital I/O port capable of exchanginginformation with the chemical treatment system 610 as well as thethermal treatment system 620.

As shown in FIG. 6, the thermal treatment system 620 further comprises atemperature controlled substrate holder 670. The substrate holder 670can further comprise a heating element 676 embedded therein and asubstrate holder temperature control unit 678 coupled thereto. Theheating element 676 can, for example, comprise a resistive heaterelement such as a tungsten, nickel-chromium alloy, aluminum-iron alloy,aluminum nitride, etc., filament. Examples of commercially availablematerials to fabricate resistive heating elements include Kanthal,Nikrothal, and Akrothal, which are registered trademark names for metalalloys produced by Kanthal Corporation of Bethel, CT. The Kanthal familyincludes ferritic alloys (FeCrAI) and the Nikrothal family includesaustenitic alloys (NiCr, NiCrFe).

As discussed above, when an electrical current flows through thefilament, power is dissipated as heat, and, therefore, the substrateholder temperature control unit 678 can, for example, comprise acontrollable DC power supply. Alternately, the temperature controlledsubstrate holder 670 can, for example, be a cast-in heater commerciallyavailable from Watlow (1310 Kingsland Dr., Batavia, Ill., 60510) capableof a maximum operating temperature of 400 to 450 C., or a film heatercomprising aluminum nitride materials that is also commerciallyavailable from Watlow and capable of operating temperatures as high as300 C. and power densities of up to 23.25 W/cm². Alternatively, acooling element can be incorporated in the substrate holder 670.

The temperature of the substrate holder 670 can be monitored using atemperature-sensing device such as a thermocouple (e.g. a K-typethermocouple). Furthermore, a controller can utilize the temperaturemeasurement as feedback to the substrate holder temperature control unit678 in order to control the temperature of the substrate holder 670.

Referring again to FIG. 6, the thermal treatment system 620 can furthercomprise a temperature controlled thermal treatment chamber 621 that ismaintained at a selected temperature. For example, a thermal wallheating element 683 can be coupled to a thermal wall temperature controlunit 681, and the thermal wall heating element 683 can be configured tocouple to the thermal treatment chamber 621. The heating element 683can, for example, comprise a resistive heater element such as atungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride,etc., filament. Examples of commercially available materials tofabricate resistive heating elements include Kanthal, Nikrothal,Akrothal, which are registered trademark names for metal alloys producedby Kanthal Corporation of Bethel, CT. The Kanthal family includesferritic alloys (FeCrAI) and the Nikrothal family includes austeniticalloys (NiCr, NiCrFe).

When an electrical current flows through the filament, power isdissipated as heat, and, therefore, the thermal wall temperature controlunit 681 can, for example, comprise a controllable DC power supply. Forexample, thermal wall heating element 683 can comprise at least oneFirerod cartridge heater commercially available from Watlow (1310Kingsland Dr., Batavia, Ill., 60510). Alternatively, or in addition,cooling elements may be employed in thermal treatment chamber 621. Thetemperature of the thermal treatment chamber 621 can be monitored usinga temperature-sensing device such as a thermocouple (e.g. a K-typethermocouple, Pt sensor, etc.). Furthermore, a controller can utilizethe temperature measurement as feedback to the thermal wall temperaturecontrol unit 681 in order to control the temperature of the thermaltreatment chamber 621.

In addition, thermal treatment system 620 can further comprise an upperassembly 684. The upper assembly 684 can, for example, comprise a gasinjection system for introducing a purge gas, process gas, or cleaninggas to the thermal treatment chamber 621. Alternately, the thermaltreatment chamber 621 can comprise a gas injection system separate fromthe upper assembly. For example, a purge gas, process gas, or cleaninggas can be introduced to the thermal treatment chamber 621 through aside-wall thereof.

In an alternate embodiment, the upper assembly 684 can comprise aradiant heater such as an array of tungsten halogen lamps for heatingthe substrate 642″ positioned on the substrate lifter assembly 690. Thethermal treatment system 620 can further comprise a temperaturecontrolled upper assembly 684 that can be maintained at a selectedtemperature. For example, the upper assembly 684 can comprise a heatingelement. The temperature of the upper assembly 684 can be monitoredusing a temperature-sensing device. Furthermore, a controller canutilize the temperature measurement as feedback to control thetemperature of the upper assembly 684. The upper assembly 684 mayadditionally or alternatively include a cooling element.

Referring again to FIG. 6, the thermal treatment system 620 can furthercomprise a substrate lifter assembly 690. The substrate lifter assembly690 can be configured to lower a substrate 642′ to an upper surface ofthe substrate holder 670, as well as raise a substrate 642″ from anupper surface of the substrate holder 670 to a holding plane, or atransfer plane therebetween. At the transfer plane, the substrate 642″can be exchanged with a transfer system utilized to transfer substratesinto and out of the chemical and thermal treatment chambers 611, 621. Atthe holding plane, the substrate 642″ can be cooled while anothersubstrate is exchanged between the transfer system and the chemical andthermal treatment chambers 611, 621.

The thermal treatment system 620 further comprises a vacuum pumpingsystem 680. The vacuum pumping system 680 can, for example, comprise avacuum pump, and a throttle valve such as a gate valve or butterflyvalve. The vacuum pump can, for example, include a turbo-molecularvacuum pump (TMP) capable of a pumping speed up to 5000 liters persecond (and greater). TMPs are useful for low pressure processing,typically less than 50 mTorr. For high pressure processing (i.e.,greater than 100 mTorr), a mechanical booster pump and dry roughing pumpcan be used.

In addition, a gate valve assembly 696 can be utilized to verticallytranslate a gate valve in order to open and close the common opening694. The gate valve assembly 696 can vacuum seal the common opening 694.

In one embodiment, the processing system 600 can comprise a chemicaloxide removal (COR) system 610 for trimming oxidized features of a TERAlayer. The processing system 600 comprises the chemical treatment system610 for chemically treating exposed surfaces of features on a TERAlayer, such as oxidized surfaces, whereby adsorption of the processchemistry on the exposed surfaces of the features on a TERA layeraffects chemical alteration of the exposed surfaces. Additionally, theprocessing system 600 comprises the thermal treatment system 620 forthermally treating the substrate, whereby the substrate temperature iselevated in order to desorb (or evaporate) the chemically alteredexposed surfaces of the features on a TERA layer.

An exemplary COR process can comprise a number of process steps. Forexample, the substrate 642 can be transferred into the chemicaltreatment system 610 using the substrate transfer system. The substrate642 can be received by lift pins that are housed within the substrateholder 640, and the substrate 642 is lowered to the substrate holder640. Thereafter, the substrate 642 can be secured to the substrateholder 660 using a clamping system, such as an electrostatic clampingsystem, and a heat transfer gas can be supplied to the backside of thesubstrate 642.

Next, one or more chemical processing parameters for chemical treatmentof the substrate 642 can be established. For example, the one or morechemical processing parameters comprise a chemical treatment processingpressure, a chemical treatment wall temperature, a chemical treatmentsubstrate holder temperature, a chemical treatment substratetemperature, a chemical treatment gas distribution system temperature,or a chemical treatment gas flow rate, or a combination of two or morethereof. Then, the substrate 642 can be chemically treated for a firstperiod of time. The first period of time can range from 10 to 480seconds, for example.

Next, the substrate 642 can be transferred from the chemical treatmentchamber 611 to the thermal treatment chamber 621. During which time, thesubstrate clamp can be removed, and the flow of heat transfer gas to thebackside of the substrate 642 can be terminated. The substrate 642 canbe vertically lifted from the substrate holder 640 to the transfer planeusing the lift pin assembly housed within the substrate holder 640. Thetransfer system can receive the substrate 642 from the lift pins and canposition the substrate 642 within the thermal treatment system 620.Therein, the substrate lifter assembly 690 receives the substrate 641′,642″ from the transfer system, and lowers the substrate 642′ to thesubstrate holder 670

Then, the thermal processing parameters for a thermal treatment of thesubstrate 642′ can be set. For example, the one or more thermalprocessing parameters comprise a thermal treatment wall temperature, athermal treatment upper assembly temperature, a thermal treatmentsubstrate temperature, a thermal treatment substrate holder temperature,a thermal treatment substrate temperature, or a thermal treatmentprocessing pressure, or a combination of two or more thereof. Next, thesubstrate 642′ can be thermally treated for a second period of time. Thesecond period of time can range from 10 to 480 seconds, for example.

FIG. 7 illustrates a simplified block diagram of a processing subsystem700 in accordance with an embodiment of the invention. In theillustrated embodiment, the processing subsystem 700 for performing anumber of processes, such as etching, ashing, cleaning, and oxidizing,is presented. In the illustrated embodiment, the processing subsystem700 can comprise a processing chamber 710, an upper assembly 720, a gassupply system 750, a shower plate assembly 756, a substrate holder 730for supporting a substrate 705, a pressure control system 780, and acontroller 790.

In one embodiment, the processing subsystem 700 can comprise thepressure control system 780 that can be coupled to the processingchamber 710. For example, the pressure control system 780 can comprise athrottle valve (not shown) and a turbomolecular pump (TMP) (not shown)and can provide a controlled pressure in the processing chamber 710. Inalternate embodiments, the pressure control system 700 can comprise adry pump. For example, the chamber pressure can range from approximately0.1 mTorr to approximately 100 mTorr. Alternatively, the chamberpressure can range from approximately 0.1 mTorr to approximately 20mTorr.

The processing chamber 710 can facilitate the formation of plasma in aprocess space 702. The processing subsystem 700 can be configured toprocess substrates of any size, such as 200 mm substrates, 300 mmsubstrates, or larger substrates. Alternately, the processing subsystem700 can operate by generating plasma in one or more processing chambers.

The processing subsystem 700 can comprise a shower plate 758 coupled togas distribution system components 756 and 752. For example, the gasdistribution system component 752 can be coupled to a gas distributionsystem 750. the shower plate 758 can comprise quartz and can be mountedopposite the substrate holder 730. the shower plate 758 can comprise oneor more distribution regions (not shown). A shield ring 744 can be usedto couple the shower plate 758 to the gas distribution system component756. Ceramic insulators 740, 742, and 746 can be used to couple the gasdistribution system component 756 and the shower plate 758 to theprocessing chamber 710.

The gas distribution system 750 can provide process gas to the gasdistribution system components 756, 752 and to the shower plate 758. Thegas chemistries and flow rates can be individually controlled.

The processing subsystem 700 can comprise an upper electrode 725 thatcan be coupled to the gas distribution system components 756, 752, tothe shower plate 758 and to the processing chamber 710. The upperelectrode 725 can comprise temperature control elements (not shown). Theupper electrode 725 can be coupled to a first RF source 770 using afirst match network 772. Alternately, a separate match network 772 isnot required.

The first RF source 770 can provide a TRF signal to the upper electrode,and the first RF source 770 can operate in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz. The TRF signal can bein the frequency range from approximately 1 MHz. to approximately 100MHz. or alternatively in the frequency range from approximately 10 MHz.to approximately 100 MHz. The first RF source 790 can operate in a powerrange from approximately 0 watts to approximately 10000 watts, oralternatively the first RF source 770 can operate in a power range fromapproximately 0 watts to approximately 5000 watts.

The upper electrode 725 and the first RF source 770 can be parts of acapacitively coupled plasma source. The capacitively couple plasmasource may be replaced with or augmented by other types of plasmasources, such as an inductively coupled plasma (ICP) source, atransformer-coupled plasma (TCP) source, a microwave powered plasmasource, an electron cyclotron resonance (ECR) plasma source, a Heliconwave plasma source, and a surface wave plasma source. As is well knownin the art, the upper electrode 725 may be eliminated or reconfigured inthe various suitable plasma sources.

The substrate 705 can be, for example, transferred into and out ofprocessing chamber 710 through a slot valve (not shown) and chamberfeed-through (not shown) via robotic substrate transfer system (notshown), and it can be received by the substrate holder 730. In analternate embodiment, the processing chamber 710 can comprise atranslation device (not shown), and when the substrate 705 is receivedfrom the substrate transfer system, the substrate 705 can be raisedand/or lowered using a translation device (not shown) that can becoupled to the substrate holder 730.

The substrate 705 can be affixed to the substrate holder 730 via anelectrostatic clamping system 764. For example, the electrostaticclamping system 764 can comprise an electrode and an ESC supply.Clamping voltages that can range from approximately −5000 V toapproximately +5000 V, for example, can be provided to the clampingelectrode. Alternatively, the clamping voltage can range fromapproximately −2500 V to approximately +2500 V. In alternateembodiments, an ESC system and supply may be omitted altogether.

The substrate holder 730 can comprise lift pins (not shown) for loweringand/or raising the substrate 705 to and/or from the surface of thesubstrate holder 730. In alternate embodiments, different lifting meanscan be provided in the substrate holder 730. In alternate embodiments,gas can, for example, be delivered to the backside of the substrate 705via a backside gas system to improve the gas-gap thermal conductancebetween the substrate 705 and the substrate holder 730.

A temperature control system can also be provided. Such a system can beutilized when temperature control of the substrate is required atelevated or reduced temperatures. For example, temperature controlelements (not shown) can be included in the substrate holder 730, theprocessing chamber 710 and/or the upper assembly 720.

Also, an electrode 768 can be coupled to a second RF source 775 using asecond match network 777. Alternately, the match network 777 may beomitted altogether.

The second RF source 775 can provide a bottom RF signal (BRF) to thelower electrode 768, and the second RF source 775 can operate in afrequency range from approximately 0.1 MHz. to approximately 200 MHz.The BRF signal can be in the frequency range from approximately 0.2 MHz.to approximately 30 MHz. or alternatively, in the frequency range fromapproximately 0.3 MHz. to approximately 15 MHz. The second RF source 775can operate in a power range from approximately 0.0 watts toapproximately 2500 watts, or alternatively, the second RF source 775 canoperate in a power range from approximately 0.0 watts to approximately500 watts. In various embodiments, the lower electrode 768 may be notused, or may be the sole source of plasma within the chamber, or mayaugment any additional plasma source.

Additionally, the substrate holder 730 can further comprise a quartzfocus ring 762 and quartz isolators 760, 766. Alternately, the focusring 762 and/or quartz isolators 760, 766 may be omitted altogether.

The processing chamber 710 can further comprise a chamber liner 714 andat least one protective element 716. For example, the protective element716 can comprise a ceramic material, and can be used to protect thesubstrate holder 730 and the wall. In an alternate embodiment, theprotective element 716 may be omitted altogether.

In one embodiment, a gap can be established between the shower plate 758and the substrate holder 730 using different wall heights for theprocessing chamber 710. For example, a 170 mm gap can be established. Inalternate embodiments, different gap sizes can be used. In otherembodiments, a translation device (not shown) can be used to provide avariable gap, and the gap can remain fixed or the gap can be changedduring a process.

In an alternate embodiment, the processing chamber 710 can, for example,further comprise a monitoring port (not shown). A monitoring port can,for example, permit optical monitoring of the process space 702.

The processing subsystem 700 can also comprise the controller 790. Thecontroller 790 can be coupled to the processing chamber 710, the gassupply system 750, the first RF match 772, the first RF source 770, thesecond RF match 787, the second RF source 785, and the pressure controlsystem 780. The controller 790 can be configured to provide control datato these components and receive data such as process data from thesecomponents. For example, controller 790 can comprise a microprocessor, amemory, and a digital I/O port capable of generating control voltagessufficient to communicate and activate inputs to the processing system700 as well as monitor outputs from the processing subsystem 700.

Moreover, the controller 790 can exchange information with systemcomponents. Also, a program stored in the memory can be utilized tocontrol the aforementioned components of the processing subsystem 700according to a process recipe. In addition, controller 790 can beconfigured to analyze the process data, to compare the process data withtarget process data, and to use the comparison to change a processand/or control the deposition tool. Also, the controller 790 can beconfigured to analyze the process data, to compare the process data withhistorical process data, and to use the comparison to predict, prevent,and/or declare a fault. During the etching of a TERA layer, thesubstrate 705 can be placed on the substrate holder 730 in theprocessing chamber 710 . For example, the processing chamber 710 can bechosen based on the gap size between the upper electrode surface 725 anda surface of the substrate holder 730. The gap can range fromapproximately 10 mm to approximately 200 mm, or alternatively, the gapcan range from approximately 150 mm to approximately 190 mm. Inalternate embodiments, the gap size can be different.

During a TERA layer etching process, a TRF signal can be provided to theupper electrode 725 using the first RF source 770. For example, thefirst RF source 770 can operate in a frequency range from approximately0.1 MHz. to approximately 200 MHz. Alternatively, the first RF source770 can operate in a frequency range from approximately 1 MHz. toapproximately 100 MHz., or the first RF source 770 can operate in afrequency range from approximately 20 MHz. to approximately 100 MHz. Thefirst RF source 770 can operate in a power range from approximately 10watts to approximately 10000 watts, or alternatively, the first RFsource 770 can operate in a power range from approximately 10 watts toapproximately 5000 watts

Also, when etching a TERA layer, a BRF signal can be provided to thelower electrode 768 using the second RF source 775. For example, thesecond RF source 775 can operate in a frequency range from approximately0.1 MHz. to approximately 200 MHz. Alternatively, the second RF source775 can operate in a frequency range from approximately 0.2 MHz. toapproximately 30 MHz, or the second RF source can operate in a frequencyrange from approximately 0.3 MHz. to approximately 15 MHz. The second RFsource 775 can operate in a power range from approximately 0.0 watts toapproximately 1000 watts, or alternatively, the second RF source 775 canoperate in a power range from approximately 0.0 watts to approximately500 watts. In an alternate embodiment, a BRF signal is not required.

In addition, a process gas can be provided to the processing chamber 710using the shower plate 758. For example, the process gas can comprise anoxygen-containing gas and an inert gas. For example, theoxygen-containing gas can comprise O₂, CO, NO, N₂O, or CO₂, or acombination of two or more thereof, and the flow rate can range fromapproximately 0 sccm to approximately 10000 sccm. The inert gas cancomprise argon, helium, or nitrogen, or a combination of two or morethereof, and the flow rate for the inert gas can range fromapproximately 0 sccm to approximately 10000 sccm.

Furthermore, the chamber pressure and substrate temperature can becontrolled during the etching of the TERA layer. For example, thechamber pressure can range from approximately 0.1 mTorr to approximately100.0 mTorr, and the substrate temperature can range from approximately0° C. to approximately 500° C.

During the oxidation of the features of a TERA layer, the substrate canbe placed on the substrate holder 730 in a processing chamber 710. Forexample, the processing chamber 710 can be chosen based on the gap sizebetween the upper electrode surface 725 and a surface of the substrateholder 730. The gap can range from approximately 10 mm to approximately200 mm, or alternatively, the gap can range from approximately 150 mm toapproximately 190 mm. In alternate embodiments, the gap size can beselected from a wide variety of predetermined values.

During the oxidation of the features of a TERA layer, a TRF signal canbe provided to the upper electrode 725 using the first RF source 770.For example, the first RF source 770 can operate in a frequency rangefrom approximately 0.1 MHz. to approximately 200 MHz. Alternatively, thefirst RF source 770 can operate in a frequency range from approximately1 MHz. to approximately 100 MHz. or the first RF source 770 can operatein a frequency range from approximately 20 MHz. to approximately 100MHz. The first RF source 770 can operate in a power range fromapproximately 10 watts to approximately 10000 watts, or alternatively,the first RF source 770 can operate in a power range from approximately10 watts to approximately 5000 watts

Also, when oxidizing the features of a TERA layer, a BRF signal can beprovided to the lower electrode 768 using the second RF source 775. Forexample, the second RF source 775 can operate in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz. Alternatively, thesecond RF source 775 can operate in a frequency range from approximately0.2 MHz. to approximately 30 MHz. or the second RF source can operate ina frequency range from approximately 0.3 MHz. to approximately 15 MHz.The second RF source 775 can operate in a power range from approximately0.0 watts to approximately 1000 watts, or alternatively, the second RFsource 775 can operate in a power range from approximately 0.0 watts toapproximately 500 watts. In an alternate embodiment, a BRF signal is notrequired.

In addition, when oxidizing the features of a TERA layer, a process gascan be provided to the processing chamber 710 using the shower plate758. For example, the process gas can comprise an oxygen-containing gasand/or an inert gas. For example, the oxygen containing gas can compriseO₂, CO, NO, N₂ 0, or CO₂, or a combination of two or more thereof, andthe flow rate can range from approximately 0.0 sccm to approximately10000 sccm. The inert gas can comprise argon, helium, or nitrogen, or acombination of two or more thereof, and the flow rate for the inert gascan range from approximately 0 sccm to approximately 10000 sccm.Furthermore, the chamber pressure and substrate temperature can becontrolled when oxidizing the features of a TERA layer. For example, thechamber pressure can range from approximately 0.1 mTorr to approximately100.0 Torr, and the substrate temperature can range from approximately0° C. to approximately 500° C.

Although only certain embodiments of this invention have been describedin detail above, those skilled in the art will readily appreciate thatmany modifications are possible in the embodiments without materiallydeparting from the novel teachings and advantages of this invention.Accordingly, all such modifications are intended to be included withinthe scope of this invention.

Thus, the description is not intended to limit the invention and theconfiguration, operation, and behavior of the present invention has beendescribed with the understanding that modifications and variations ofthe embodiments are possible, given the level of detail present herein.Accordingly, the preceding detailed description is not meant or intendedto, in any way, limit the invention—rather the scope of the invention isdefined by the appended claims. Moreover, where list are providedherein, those lists are intended to be exemplary only. Being open-ended,the list is not meant to limit the scope of the invention solely to thespecific embodiments enumerated. To the contrary, as should beappreciated by those skilled in the art, further components, stages,arrangements, etc. may be easily added or substituted without departingfrom the intended scope of the invention.

1. A method of processing a Tunable Etch Rate ARC (TERA) layer on asubstrate, the method comprising: depositing the TERA layer on thesubstrate using a plasma-enhanced chemical vapor deposition (PECVD)system; creating features in the TERA layer using an etching system; andreducing the size of the features in the TERA layer.
 2. The method ofclaim 1, further comprising: positioning the substrate on a substrateholder in a processing chamber within the PECVD system; and providing aprocess gas to the processing chamber, wherein the process gas comprisesan inert gas and one of a silicon-containing precursor or acarbon-containing precursor.
 3. The method of claim 2, furthercomprising: establishing a gap between an upper electrode surface and asurface of the substrate holder, wherein the PECVD system comprises anupper electrode coupled to the processing chamber and the substrateholder comprises a translation device.
 4. The method of claim 3, whereinthe gap ranges from approximately 10 mm to approximately 200 mm.
 5. Themethod of claim 3, further comprising: coupling a first RF source to theupper electrode; operating the first RF source in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz.; and operating thefirst RF source in a power range from approximately 10 watts toapproximately 10000 watts.
 6. The method of claim 5, further comprising:coupling a second RF source to the substrate holder; operating thesecond RF source in a frequency range from approximately 0.1 MHz. toapproximately 200 MHz.; and operating the second RF source in a powerrange from approximately 10 watts to approximately 10000 watts.
 7. Themethod of claim 3, further comprising: coupling an RF source to thesubstrate holder; operating the RF source in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz.; and operating the RFsource in a power range from approximately 10 watts to approximately10000 watts.
 8. The method of claim 2, wherein the silicon-containingprecursor comprises monosilane (SiH4), tetraethylorthosilicate (TEOS),monomethylsilane (1MS), dimethylsilane (2MS), trimethylsilane (3MS),tetramethylsilane (4MS), octamethylcyclotetrasiloxane (OMCTS),dimethyidimethoxysilane (DMDMOS), or tetramethylcyclotetrasilane(TMCTS), or a combination of two or more thereof.
 9. The method of claim2, wherein the carbon-containing precursor comprises CH₄, C₂H₄, C₂H₂,C₆H₆, or C₆H₅OH, or a combination of two or more thereof.
 10. The methodof claim 2, wherein the first process gas includes an inert gascomprising argon, helium, or nitrogen, or a combination of two or morethereof.
 11. The method of claim 1, wherein the TERA layer comprises aSiCOH material, or a SiCH material, or a combination thereof.
 12. Themethod of claim 1, wherein the TERA layer comprises a material having arefractive index (n) ranging from approximately 1.5 to approximately 2.5when measured at a wavelength of at least one of 248 nm, 193 nm, or 157nm, and having an extinction coefficient (k) ranging from approximately0.10 to approximately 0.9 when measured at a wavelength of at least oneof 248 nm, 193 nm, or 157 nm.
 13. The method of claim 1, furthercomprising: positioning the substrate on a substrate holder in aprocessing chamber in the etching system; providing a process gas to theprocessing chamber, wherein the process gas comprises anoxygen-containing gas and an inert gas; and establishing plasma tocreate the features in the TERA layer.
 14. The method of claim 1,further comprising: providing a photoresist layer on the substrate;transferring a pattern into the photoresist layer; creating features inthe photoresist layer by developing the photoresist layer; andtransferring the features into the TERA layer using an etch process. 15.The method of claim 14, further comprising: determining a trimmingamount; oxidizing exposed surfaces of the features in the TERA layer,wherein the trimming amount is used to control the oxidation process;and removing the oxidized portion of the TERA features, wherein theremoval process comprises a chemical oxide removal (COR) process. 16.The method of claim 1, further comprising: providing a photoresist layeron the substrate; transferring a pattern into the photoresist layer;creating features in the photoresist layer by developing the photoresistlayer; transferring the features into the TERA layer using an etchprocess; and removing the photoresist layer.
 17. The method of claim 16,further comprising: determining a trimming amount; oxidizing exposedsurfaces of the features in the TERA layer, wherein the trimming amountis used to control the oxidation process; and removing the oxidizedportion of the TERA features, wherein the removal process comprises achemical oxide removal (COR) process.
 18. The method of claim 1, furthercomprising: determining a trimming amount; oxidizing exposed surfaces ofthe features in the TERA layer, wherein the trimming amount is used tocontrol the oxidation process; and removing the oxidized portion of theTERA features, wherein the removal process comprises a chemical oxideremoval (COR) process.
 19. The method of claim 18, further comprising:chemically treating the exposed surfaces of the features using a CORmodule by providing a process gas, wherein a solid reaction producthaving a thickness approximately equal to the trimming amount is formedon at least one of the oxidized exposed surfaces of the features in theTERA layer; and executing a post heat treatment (PHT) process using aPHT module by evaporating the solid reaction product, thereby trimmingat least one of the features in the TERA layer by the trimming amount.20. The method of claim 19, wherein the process gas comprises anoxygen-containing gas, a nitrogen containing gas, a fluorine-containinggas, or a chlorine-containing gas, or a combination of two or morethereof.
 21. The method of claim 20, wherein the process gas comprisesHF and NH₃.
 22. A system for processing a Tunable Etch Rate ARC (TERA)layer on a substrate, comprising: a processing subsystem for depositingthe TERA layer on the substrate using a plasma enhanced chemical vapordeposition (PECVD) system; a processing subsystem for creating featuresin the TERA layer using an etching system; and a processing subsystemfor reducing the size of the features in the TERA layer.
 23. The systemof claim 22, further comprising: a substrate holder in a processingchamber in the PECVD system; and means for providing a process gas tothe processing chamber, wherein the process gas comprises an inert gasand a silicon-containing precursor, or a carbon-containing precursor, ora combination thereof.
 24. The system of claim 23, further comprising:an upper electrode coupled to the processing chamber; and a translationdevice coupled to the substrate holder for establishing a gap between anupper electrode surface and a surface of the substrate holder.
 25. Thesystem of claim 24, wherein the gap ranges from approximately 10 mm toapproximately 200 mm.
 26. The system of claim 23, further comprising: afirst RF source coupled to the upper electrode, wherein the first RFsource operates in a frequency range from approximately 0.1 MHz. toapproximately 200 MHz. and operates in a power range from approximately10 watts to approximately 10000 watts.
 27. The system of claim 26,further comprising: a second RF source coupled to the substrate holder,wherein the second RF source operates in a frequency range fromapproximately 0.1 MHz. to approximately 200 MHz. and operates in a powerrange from approximately 10 watts to approximately 10000 watts.
 28. Thesystem of claim 23, further comprising: an RF source coupled to thesubstrate holder, wherein the RF source operates in a frequency rangefrom approximately 0.1 MHz. to approximately 200 MHz. and operates in apower range from approximately 10 watts to approximately 10000 watts.29. The system of claim 23, wherein the silicon-containing precursorcomprises monosilane (SiH₄), tetraethylorthosilicate (TEOS),monomethylsilane (1MS), dimethylsilane (2MS), trimethylsilane (3MS),tetramethylsilane (4MS), octamethylcyclotetrasiloxane (OMCTS),dimethyldimethoxysilane (DMDMOS), or tetramethylcyclotetrasilane(TMCTS), or a combination of two or more thereof.
 30. The system ofclaim 23, wherein the carbon-containing precursor comprises CH₄, C₂H₄,C₂H₂, C₆H₆, or C₆H₅OH, or a combination of two or more thereof.
 31. Thesystem of claim 23, wherein the first process gas includes an inert gascomprising argon, helium, or and nitrogen, or a combination of two ormore thereof.